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| savantic semiconductor product specification silicon npn power transistors 2SC3285 description with to-3pn package high speed switching good linearity of h fe high v cbo applications for high speed switching applications pinning(see fig.2) pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1000 v v ceo collector-emitter voltage open base 800 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i cp collector current-peak 6 a i b base current 2 a t c =25 70 p c collector power dissipation t a =25 2.5 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3285 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.5a ; i e =0 800 v v ce (sat) collector-emitter saturation voltage i c =2a; i b =0.4a 1.5 v v be (sat) base-emitter saturation voltage i c =2a; i b =0.4a 1.5 v i cbo collector cut-off current v cb =1000v; i e =0 50 a i ebo emitter cut-off current v eb =7v; i c =0 50 a h fe dc current gain i c =2a ; v ce =5v 6 f t transition frequency i c =0.2a ; v ce =5v 4 mhz switching times t on turn-on time 1.0 s t s storage time 2.5 s t f fall time i c =2a; i b1 =0.4a;i b2 =-0.8a v cc =250v 0.5 s savantic semiconductor product specification 3 silicon npn power transistors 2SC3285 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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